Semiconductor integrated circuit device with high integration de

Details Semiconductor integrated circuit device with high integration de Semiconductor integrated circuit device with high integration de

1997-04-25

1999-07-06

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

257376, 257509, H01L 2976, H01L 2900

Patent

active

059201070

ABSTRACT:
In a semiconductor device having a PN junction element separating region, in order to reduce a width of the PN junction element separating region without sacrifice of a punch-through breakdown voltage of the PN junction element separating region, the PN junction element separating region is composed of an upper impurity layer of a first conductivity type having low impurity density and a lower impurity layer of the first conductivity type having a high impurity density and a width of the upper impurity layer is smaller than a width of the lower impurity layer.

REFERENCES:
patent: 3481801 (1969-12-01), Hugle
patent: 4059549 (1977-11-01), Furuhata
patent: 5406106 (1995-04-01), Hirai et al.

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