Method for increasing source/drain to channel stop breakdown and

Details Method for increasing source/drain to channel stop breakdown and Method for increasing source/drain to channel stop breakdown and

1987-05-12

1989-05-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 70, H01L 21473

Patent

active

048290190

ABSTRACT:
A method of forming semiconductor devices wherein a gap is formed beneath the field oxide between the channel stop implant and source/drain regions in the moat or active element region to prevent or minimize encroachment of channel stop impurity toward the source/drain regions to form spurious pn junctions and/or reduce the active element region.

REFERENCES:
patent: H204 (1987-02-01), Oh et al.
patent: 4442591 (1984-04-01), Haken

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