Light emitting diode

Details Light emitting diode Light emitting diode

1992-01-22

1993-05-25

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257100, 257 79, H01L 3300

Patent

active

052143066

ABSTRACT:
A light emitting diode composed of a compound semiconductor containing aluminum having a GaAlAs layer and the like and having a structure which is superior in humidity resistance and has a long life. For example, in a double hetero light emitting diode constructed by comprising a p-GaAlAs layer, an n-GaAlAs layer, and an active layer interposed between both the GaAlAs layers, an oxide layer containing the oxide of gallium is provided inside of the surface excluding a portion where an electrode is provided of its semiconductor device, so that the surface of the device is stabilized. On the other hand, in the structure of a light emitting diode in which stepped portions are provided in the peripheral part of its semiconductor device, an oxide layer is provided inside of the surface of the device and inside of the peripheral part, and an insulating layer is formed on the oxide layer on the surface of the device.

REFERENCES:
patent: 4095011 (1978-06-01), Hawrylo et al.
patent: 4197141 (1980-04-01), Bozler et al.
patent: 4354198 (1982-10-01), Hodgson et al.
patent: 4656638 (1987-04-01), Tihanyi et al.
patent: 4723253 (1988-02-01), Hayakaya et al.
patent: 4751201 (1988-06-01), Nottenburg et al.
patent: 4801993 (1989-01-01), Ankri et al.

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