Bipolar transistor by selective and lateral epitaxial overgrowth

Details Bipolar transistor by selective and lateral epitaxial overgrowth Bipolar transistor by selective and lateral epitaxial overgrowth

1987-10-19

1989-05-09

Walton, Donald L.

Fishing, trapping, and vermin destroying

437 9, 148DIG26, H01L 21265

Patent

active

048290165

ABSTRACT:
Silicon epitaxial lateral overgrowth (ELO) techniques are employed to fabricate bipolar transistors. ELO bipolar devices have may advantages in reducing parasitic values. Because the heavily doped buried layer (or sub-collector) is eliminated in ELO structures, C.sub.cs is greatly reduced. The concentric collector contact and its closeness to the active collector region reduce r.sub.c in the device. The parasitic collector-to-base capacitance, C.sub.cb, is also reduced due to oxide-isolation. The ELO device is fabricated using standard silicon-processing equipment. ELO can be accomplished on <100> or <111> silicon substrates.

REFERENCES:
patent: 3558375 (1971-01-01), Engler
patent: 3853644 (1974-12-01), Tarui et al.
patent: 4504332 (1985-03-01), Shinada
patent: 4530149 (1985-07-01), Jastrzebski et al.
patent: 4619033 (1986-10-01), Jastrzebski
patent: 4637127 (1987-01-01), Kurogi et al.
patent: 4685199 (1987-08-01), Jastrezebski
patent: 4686758 (1987-08-01), Liu et al.

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