Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1987-05-27

1989-03-14

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 48, H01S 319

Patent

active

048130508

ABSTRACT:
A high-power AlGaAs/GaAs laser device comprises: a ridge formed on the top surface of a substrate from one end thereof to the opposite end, wherein the width of the ridge is made narrower in regions near both the ends and wider in a middle region; a depression is formed in the wider region of the ridge; a clad layer is grown epitaxially over the top surface of the substrate; and an active layer is grown epitaxially on the clad layer, wherein the thickness of the active layer is thinner in portions just above the narrower ridge regions and relatively thicker in a portion just above the wider ridge region.

REFERENCES:
patent: 4679200 (1987-07-01), Matsui et al.
patent: 4745611 (1988-05-01), Hamada et al.
T. Murakami et al., "High-Power AlGaAs Laser With a Thin Tapered-Thickness Active Layer", Electronics Letters, Feb. 13, 1986, vol. 22, No. 4, pp. 217-218.

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