Semiconductor photoelectric conversion device, light-transparent

Details Semiconductor photoelectric conversion device, light-transparent Semiconductor photoelectric conversion device, light-transparent

1987-07-30

1989-05-09

Lacey, David L.

Fishing, trapping, and vermin destroying

437 3, 437 4, 437 5, H01L 3118

Patent

active

048290130

ABSTRACT:
In a semiconductor photoelectric conversion device in which a first light-transparent conductive layer for an electrode is formed on a light transparent substrate, a non-single-crystal semiconductor laminate member having formed therein at least one PIN or PN junction is formed on the first conductive layer and a second conductive layer for another electrode is formed on the semiconductor laminate member, the boundary between the substrate and the first conductive layer is formed by a first uneven surface including a number of surfaces of convexities, each having triangular, trapezoidal or like cross-section the base of which extend along the substrate surface and the two lateral edges of which are inclined thereto and make an angle .phi. to each other, where 45.degree..ltoreq..phi.<120.degree.. The boundary between the first conductive layer and the semiconductor laminate member is formed by a second uneven surface corresponding to the first one. Further, the second conductive layer is reflective, and the boundary between the semiconductor laminate member and the second conductive layer is formed by a third uneven surface.

REFERENCES:
patent: 4135290 (1979-01-01), Evans, Jr.
patent: 4348254 (1982-09-01), Lindmayer
patent: 4350561 (1982-09-01), Little
patent: 4767336 (1988-08-01), Yamazaki

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