MOS Devices having buried terminal zones under local oxide regio

Details MOS Devices having buried terminal zones under local oxide regio MOS Devices having buried terminal zones under local oxide regio

1978-12-07

1980-07-29

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 357 23, B01J 1700

Patent

active

042143594

ABSTRACT:
A method of making MOS devices, primarily in integrated circuit form, is disclosed. Device areas first are defined on a silicon semiconductor chip, typically by means of a silicon nitride pattern 13A-13B. This pattern then is used to locate impurity introductions and to define areas of semiconductor surface portion removal. The latter operation produces mesas 16-17 coincident with the device areas. By this combination of steps and silicon oxide regrowth 27 where silicon has been removed, well-defined conductivity type zones are formed under the silicon oxide portions to function as buried terminal zones 28, 29, 30 of MOS devices. In the sole critical mask registration step, one edge 38 of the gate electrode 31 is located relative to the boundary 39 of a buried terminal zone 28. Finally, the channel zone 34 and the other terminal zone 33 of an MOS transistor are emplaced by a self-alignment process, followed by a heating step which adjusts final device dimensions.

REFERENCES:
patent: 3533158 (1970-10-01), Bower
patent: 3600647 (1971-08-01), Gray
patent: 3950777 (1976-04-01), Tarui
patent: 4050965 (1977-09-01), Ipri
patent: 4173818 (1979-11-01), Bassous
IEEE, IEDM, Tech. Digest, Wash. D.C., "DIMOS*-A Novel . . . MOSFET," by Tihanyi, pp. 399-401, 1977.

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