Suspended gate field effect semiconductor pressure transducer de

Details Suspended gate field effect semiconductor pressure transducer de Suspended gate field effect semiconductor pressure transducer de

1987-04-07

1989-03-14

James, Andrew J.

357 2315, H01L 2984, H01L 2996

Patent

active

048128880

ABSTRACT:
A capacitive pressure transducer comprising:

REFERENCES:
patent: 2899344 (1959-08-01), Atalla et al.
patent: 3440873 (1969-04-01), Eichelberger
patent: 3445596 (1969-05-01), Drake et al.
patent: 3585415 (1971-06-01), Muller
patent: 4035822 (1977-07-01), Vilkomerson
J. M. Borky and K. D. Wise, IEEE Trans. El. Dev. ED-26, 1906, (1979).
S. K. Clark and K. D. Wise, IEEE Trans. El. Dev. ED-26, 1887, (1979).
W. H. Ko, M. Bao and Y. Hong, IEEE Trans. El. Dev. Ed-29, 49, (1982).
Y. S. Lee and K. D. Wise, IEEE Trans. El. Dev. Ed-29, 42, (1982).
Y. L. Lee and K. D. Wise, IEEE Trans. El. Dev., ED-29, 33, (1982).

Affiliated with

Also associated with

Rating

Suspended gate field effect semiconductor pressure transducer de does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Suspended gate field effect semiconductor pressure transducer de, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Suspended gate field effect semiconductor pressure transducer de will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-897225