Method for forming a grown bipolar electrode contact using a sid

Details Method for forming a grown bipolar electrode contact using a sid Method for forming a grown bipolar electrode contact using a sid

1992-06-24

1993-05-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 89, 437162, 437203, 148DIG11, H01L 21265

Patent

active

052139891

ABSTRACT:
A method for forming a grown bipolar transistor electrode contact wherein a substrate (12) is provided. A doped region (31) is formed within the substrate (12). A dielectric layer (26) is formed having an opening (36) which exposes a portion of the doped region (31). Conductive spacers (38) are formed adjacent a sidewall of the dielectric layer (26). A conductive region (34) is formed through either a selective process or an epitaxial process by using the conductive spacers (38) as a source for epitaxial or selective formation. The conductive region (34) forms the grown bipolar electrode contact by electrically contacting the doped region (31). The conductive region (34) is optionally overgrown in a lateral direction over a top surface of the dielectric layer (26) to form a self-aligned electrical contact pad for the doped region (31).

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