Non-volatile memory with improved readout

Static information storage and retrieval – Plural shift register memory devices

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

307221R, G11C 2100

Patent

active

041387376

ABSTRACT:
An improved electrically alterable non-volatile memory for storing information is described incorporating an array of memory cells comprised of variable threshold field effect transistors, means for selecting a row in the array, means for writing information into the memory cells of a selected row, and means for reading information from the memory cells of a selected row by comparing the voltage difference of successive memory cells in the selected row.

REFERENCES:
patent: 4065756 (1977-12-01), Panigrahi

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Non-volatile memory with improved readout does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory with improved readout, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory with improved readout will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-894572

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.