Semiconductor device having rapid removal of majority carriers f

Details Semiconductor device having rapid removal of majority carriers f Semiconductor device having rapid removal of majority carriers f

1987-04-17

1988-11-01

Clawson, Jr., Joseph E.

357 234, 357 43, 357 86, 357 89, H01L 2974

Patent

active

047823798

ABSTRACT:
A semiconductor device comprising a bulk substrate and an epitaxial layer grown thereon attains the feature of rapid removal of majority carriers from an N-type active base region thereof, a function conventionally performed by anode shorts, through the incorporation into the otherwise P-type substrate of a highly doped, N-type region having a surface in contact with the N-type epitaxial layer for injecting majority carriers from an N-type active base region in the epitaxial layer into the remaining P-type portion of the substrate.

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patent: 4364073 (1982-12-01), Becke et al.
patent: 4514747 (1985-04-01), Miyata et al.

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