Photovoltaic device with increased open circuit voltage

Details Photovoltaic device with increased open circuit voltage Photovoltaic device with increased open circuit voltage

1983-09-21

1988-11-01

Sikes, William L.

H01L 2714, H01L 3100

Patent

active

047823763

ABSTRACT:
A photovoltaic device having an increased open circuit voltage includes a body of semiconductor material between layers of opposite conductivity type, one of which has a wide bandgap energy and through which light enters the device. The body includes a first region closest to the wide bandgap layer and a second region with the bandgap energy of the first region being greater than that of the second region and less than or equal to that of the wide bandgap layer.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4109271 (1978-08-01), Pankove
patent: 4379943 (1983-04-01), Yang et al.
K. Homma et al., "Technique for Improving the Conversion Efficiency of Thin-Film Amorphous Semiconductor Solar Cells", Tokyo Electrical Engineering College Technical Report No. 29, Dec. 1981 (Translation).
Scott et al., "Glow Discharge Preparation of Amorphous Hydrogenated Silicon From Higher Silanes", Applied Physics Letters 37, 725 (1980).
Ogawa et al., "Preparation of a-Si:H from Higher Silanes (Si.sub.n H.sub.2n+2)", Japanese Journal of Applied Physics 20, L639 (1981).

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