Method of making self aligned external and active base regions i

Details Method of making self aligned external and active base regions i Method of making self aligned external and active base regions i

1987-07-30

1989-03-14

Roy, Upendra

Fishing, trapping, and vermin destroying

357 34, 357 91, 437 32, 437 33, 437200, H01L 21265, H01L 2122

Patent

active

048124176

ABSTRACT:
A semiconductor integrated circuit device including a bipolar transistor having a semiconductor layer than will become a collector region, a base region provided at the surface of the semiconductor layer, and an emitter region provided at the surface of the base region. The device comprises: a first silicon film for connecting an external base layer and a base electrode of the transistor, and a first silicide film that is produced on the surface of the first silicon film; and a second silicon film for connecting an emitter layer and an emitter electrode of the transistor and a second silicide film that is produced on the surface of the second silicon film.

REFERENCES:
patent: 4368573 (1983-01-01), De Brebisson et al.
patent: 4437897 (1984-03-01), Kemlage
patent: 4504332 (1985-03-01), Shinada
patent: 4581815 (1986-04-01), Cheung et al.
patent: 4610730 (1986-09-01), Harrington et al.
patent: 4669179 (1987-06-01), Weinberg et al.

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