Integration of surface emitting laser and photodiode for monitor

Coherent light generators – Particular active media – Semiconductor

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372 96, H01S 318

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active

058387080

ABSTRACT:
The present invention provides a structure and method for integrating a photodiode and surface emitting laser on a substrate which minimizes both process complexity and exposure of epitaxial layers. In a first embodiment, a photodiode structure is integrated with the surface emitting laser simply by adding a separate Schottky contact to the surface of the SEL. In a second embodiment, a photodiode structure is integrated with the surface emitting laser by positioning a current isolation region between the photodiode and the SEL. The current isolation region should extend into a first mirror region but not into the light generation region of the active region so that the light generation region of the SEL is optically coupled to the light absorption region of the photodiode.

REFERENCES:
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patent: 5256596 (1993-10-01), Ackley et al.
Hecht, Understanding Lasers An Entry Level Guide, IEEE Press, pp. 280-281, 1994.
G. W. Turner et al., "Through-Wafer Optical Communication Using Monolithic InGaAs-on Si Led's and Monolithic PtSi8-Si Schottky-Barrier Detector" IEEE Photonics Technology Letters, vol. 3, No. 8, Aug. 1991, New York, pp. 761-763.

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