Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1981-03-05
1984-04-17
Ozaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29578, 148187, H01L 21265, H01L 2128
Patent
active
044425899
ABSTRACT:
A transistor and method of forming the same are disclosed. A thick mesa of dielectric material is grown on a semiconductor substrate and two or more layers of polycrystalline silicon grown on the vertical sides of the mesa serve a masking function to define the gate region of the transistor with high accuracy. The mesa and the two or more polycrystalline layers remain in the final device.
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IBM Technical Disclosure Bulletin, vol. 19, No. 4, Sep. 1976, pp. 1162 and 1163.
IBM Technical Disclosure Bulletin vol. 21, No. 12, May 1979, pp. 5035-5038.
Doo Ven Y.
Tsang Paul J.
International Business Machines - Corporation
Ozaki G.
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