Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Patent
1996-12-11
1998-11-17
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
257607, H01L 2993
Patent
active
058380582
ABSTRACT:
In the vicinity of the (100) plane, planar channeling by (100) type crystal planes, which are (011) plane and (011) plane according to the (100) surface plane, degrades uniformity of ion implantation. Therefore, a major surface of the substrate is established at a plane perpendicular to a crystal orientation forming an angle greater than or equal to 3.5.degree. with two planes perpendicularly intersecting the (100) plane. Namely, in consideration of fluctuation in setting to an ion implantation device and ion implantation angle, the substrate having surface orientation within a range 104 is employed. Also, by limiting the orientation to be less than or equal to 10.degree. from the (100) plane, ion implantation can be performed perpendicularly to the substrate without modifying the process condition. The result of the foregoing is a semiconductor substrate which will never cause planar channeling even when ion implantation is performed in a perpendicular direction to the surface of a semiconductor substrate of silicon.
Kitajima Hiroshi
Kobayashi Akiyoshi
Monin Donald
NEC Corp.
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