Integrated circuit with gate conductor defined resistor

Details Integrated circuit with gate conductor defined resistor Integrated circuit with gate conductor defined resistor

1993-09-08

1998-11-17

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

H01L 2976

Patent

active

058380337

ABSTRACT:
A doped semiconductor distributed resistor is placed in series with the drain of a field effect transistor, typically for electrostatic discharge protection of an integrated circuit. The resistor is defined with a mask formed from the same conductor layer (e.g., polysilicon) that forms the transistor gate conductor. To avoid a floating gate, the conductor mask may be tied to the associated output bondpad. The advantages of using a gate conductor-defined resistor as compared to the prior-art practice includes better control of the resistor dimensions. Hence, the overall size of the output transistor and resistor may be reduced as compared to prior-art techniques, while achieving a high level of ESD protection.

REFERENCES:
patent: 4717684 (1988-01-01), Hinode et al.
patent: 4806999 (1989-02-01), Strauss
patent: 4821089 (1989-04-01), Strauss
patent: 4830976 (1989-05-01), Morris
patent: 4990802 (1991-02-01), Smooha
patent: 5051860 (1991-09-01), Lee et al.
patent: 5157573 (1992-10-01), Lee

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