Patent
1986-12-01
1987-08-04
Carroll, J.
357 2, 357 52, 357 59, 357 91, H01L 4500, H01L 3300, H01L 2904, H01L 2934
Patent
active
046849645
ABSTRACT:
A light emitting device comprises a body of silicon having regions of opposite conductivity type and a region about the p-n junction between the regions of opposite conductivity type which contains lattice defects and excess hydrogen. This device emits light at a wavelength between about 1.2 and about 1.3 micrometers. The method of the invention includes the steps of damaging the region about the p-n junction and hydrogenating the damage region.
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C. H. Seager et al, "Passivation of Grain Boundaries in Polycrystalline Silicon", Applied Physics Letters, vol. 34 (1979), pp. 337-334.
M. H. Brodsky, "Silicon Light-Emitting Devices", IBM Technical Disclosure Bulletin, vol. 16 (1973), p. 704.
J. I. Pankove, "Photoluminescence Recovery in Rehydrogenated Amorphous Silicon", Applied Physics Letters, vol. 32, No. 12 (1978), pp. 812-813.
J. T. Pankove and C. P. Wu, "Photoluminescence from Hydrogenated Ion-Implanted Crystalline Suilicon", Applied Physics Letters, vol. 35, No. 12 (1979), pp. 937-939.
Pankove Jacques I.
Wu Chung P.
Ball Harley R.
Carroll J.
RCA Corporation
Tripoli Joseph S.
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