SRAM with local interconnect

Details SRAM with local interconnect SRAM with local interconnect

1989-02-28

1990-12-04

Carroll, J.

357 231, 357 51, 357 67, 357 71, H01L 2701, H01L 2702, H01L 2348

Patent

active

049757563

ABSTRACT:
An SRAM using TiN local interconnects. This permits the moat parasitic capacitance to be reduced, and also avoids use of metal jumpers, resulting in increased density.

REFERENCES:
patent: 21400 (1981-01-01), Ning et al.
patent: 4063969 (1977-12-01), Peressini et al.
patent: 4178605 (1979-12-01), Hsu et al.
patent: 4199773 (1980-04-01), Goodman et al.
patent: 4366556 (1982-12-01), Kyomasu et al.
patent: 4399519 (1983-08-01), Masuda et al.
patent: 4502209 (1985-03-01), Eizenberg et al.
patent: 4545216 (1985-10-01), Lau
patent: 4570328 (1986-02-01), Price et al.
patent: 4581623 (1986-04-01), Wang
patent: 4593454 (1986-06-01), Baudrant et al.
patent: 4605947 (1986-08-01), Price et al.
patent: 4609835 (1986-09-01), Sakai et al.
patent: 4624864 (1986-11-01), Hartmann
patent: 4680612 (1987-07-01), Hieber et al.
patent: 4710897 (1987-12-01), Masuoka et al.
N. Yamamoto et al., "Effects of Impurities on Molybdenum and Polycrystalline Silicon Reactive".
Denshi Tsushimi Gakkai (Dec. 1982), pp. 39-45.
Muraeka, Silicides for VLSI Applications, (Academic Press, Inc., 1983), p. 97.
Tsukamoto et al., "Self-Aligned Titanium Silicidation of Submicron MOS Devices by Rapid Lamp Annealing," IEDM Technical Digest (IEEE, 1984), pp. 130-133.
Tsukamoto et al., "Self-Aligned Titanium Silicidation by Lamp Annealing," Jap. J. App. Phys. Suppl., (16th Int. Conf. on Sol. St. Dev. Matls', 1984), pp. 47-50.
M. Wittmer et al., "Applications of TiN Thin Films in Silicon Device Technology," Materials Research Society Symposium, Nov. 1984 (pp. 397-405).
Kaneko et al., "Novel Submicron MOS Devices by Self-Aligned Nitridation of Silicide," Technical Digest of IEDM 1985, (IEEE), pp. 208-211, (Dec. 1, 1985).
Chen et al., "A New Device Interconnect Scheme for Sub-Micron VLSI," Technical Digest of IEDM 1984 (IEEE, 1984), pp. 118-121.
Alperin et al., "Development of the Self-Aligned Titanium Silicide Process or VLSI Applications," J. Solid-State Circuits (IEEE, Feb 1985), pp. 61-69.
Tsang, "Forming Thick Metal Silicide for Contact Barrier", IBM Technical Disclosure Bulletin, vol. 19, No. 9, Feb. 1977, pp. 3383-3385.
Rideout, "Method of Fabricating MOSFET Integrated Circuits with Low Resistivity Interconnection Lines," IBM Technical Disclosure Bulletin, vol. 23, No. 6, Nov. 1980, pp. 2563-2566.
De LaMoneda, "Self-Aligned Silicide Buried Contacts" IBM Technical Disclosure Bulletin, vol. 24, No. 7A, Dec. 1981, pp. 3454-3457.
Ting, "TiN Formed by Evaporation as a Diffusion Barrier Between Al and Si," J. Vac. Sci. Technol., 21(1), Mar./Jun. 1982, pp. 14-18.

Affiliated with

Also associated with

Rating

SRAM with local interconnect does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with SRAM with local interconnect, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SRAM with local interconnect will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-886297