Method of making memory cell by selective oxidation of polysilic

Details Method of making memory cell by selective oxidation of polysilic Method of making memory cell by selective oxidation of polysilic

1980-05-07

1984-04-10

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 148 15, 148187, 357 41, 357 51, 357 59, B01J 1700, H01L 2704, H01L 21306

Patent

active

044412460

ABSTRACT:
A dynamic read/write memory cell of the one transistor N-channel silicon gate type is made by an improved process employing selective oxidation of polysilicon using PN junction capacitors. A relatively flat surface results from the process, which is favorable to patterning small geometries. The PN junction storage capacitors have improved alpha particle protection. Metal-to-polysilicon gate contacts are made at silicide areas over polysilicon gates; the silicide lowers resistance of the poly elements.

REFERENCES:
patent: 4125933 (1978-11-01), Baldwin
patent: 4127931 (1978-12-01), Shiba
patent: 4163243 (1979-07-01), Kamins et al.
patent: 4170492 (1979-10-01), Bartlett et al.
patent: 4210473 (1980-07-01), Takagi et al.
patent: 4219379 (1980-08-01), Athanas
patent: 4240195 (1980-12-01), Clemens et al.
patent: 4249968 (1981-02-01), Gardiner et al.

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