Semiconductor memory device having an aluminum-based metallizati

Details Semiconductor memory device having an aluminum-based metallizati Semiconductor memory device having an aluminum-based metallizati

1988-11-02

1990-12-04

Hille, Rolf

357 71, 357 45, H01L 2968, H01L 2348, H01L 2710

Patent

active

049757539

ABSTRACT:
A semiconductor memory device includes a plurality of bit lines formed on an interlayer insulation film and arranged with a first pitch defining a distance between neighboring bit lines, and word lines which are formed on an insulation film formed on the bit lines and which are arranged with a second pitch defining a distance between neighboring word lines. One of the bit and word lines which has a relatively wide pitch comprises an aluminum-based metallization film, and the other line which has a relatively narrow pitch comprises a refractory metal silicide-based metallization film.

REFERENCES:
patent: 4423432 (1983-12-01), Stewart et al.
patent: 4845544 (1989-07-01), Shimizu
patent: 4910566 (1990-03-01), Ema

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