Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1985-09-20
1987-08-04
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, H01J 3700
Patent
active
046848096
ABSTRACT:
In a method of adjusting on optical column in an electron beam exposure system, a pair of edges of a beam spot formed on a target by an electron beam is detected by rotating a first aperture mask which is located along an optical axis of an optical column. First and second blanking voltages applied to the first and second blanking deflector are adjusted so as not to completely blank the electron beam, but to minimize the detectable intensity of the beam spot. Firstly, the ration of the first voltage to the second voltage is gradually changed to shift the one pair of beam edges in a predetermined direction. The voltage ration of the voltages to be applied to the blanking deflector is determined by detecting the start of reverse shifting of the beam edges. Secondly, an excitation current supplied to a lens which projects an image of a first aperture onto a second aperture is increased to shift the other edge of the beam spot. The excitation current to be supplied to the lens is, similarly, determined by detecting the start of reverse shifting of the beam edges.
REFERENCES:
patent: 4413187 (1983-11-01), Akazawa et al.
patent: 4423305 (1983-12-01), Pfeiffer
patent: 4543512 (1985-09-01), Nakasuji et al.
patent: 4560878 (1985-12-01), Knauer et al.
Eiichi Goto, Takashi Soma and Masanori Idesawa, the 14th Symposium on Electron, Ion, and Photon Beam Technology, May 25, 1977.
H. C. Pfeiffer, Variable Spot Shaping for Electron-Beam Lithography, the 14th Symposium on Electron, Ion, and Photon Beam Tech.
Anderson Bruce C.
Kabushiki Kaisha Toshiba
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