Ion implanter end station

Details Ion implanter end station Ion implanter end station

1989-02-28

1990-12-04

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504401, 2504411, 2504421, G21K 508

Patent

active

049755862

ABSTRACT:
An end station for an ion implanter which includes a wafer support which is rotatable about a first axis extending substantially along a wafer diameter in the plane defined by the wafer surface, and about a second axis perpendicular to the first axis and extending through the center of the wafer. The drive systems for providing rotation of the wafer support are operable independently of one another and include stepper motors mounted outside the vacuum chamber of the implanter.

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patent: 4869801 (1989-09-01), Helms et al.
Improved VLSI Device Yields Through Control of Implant Angle by R. E. Kaim and J. F. M. Westendorp.
Analysis of Uniformity of Trench Side-Wall Doping by SIMS by T. Takemoto, Y. Hirofuji, H. Iwasaki, N. Matsuo.
A New Isolation Method with Boron-Implanted Sidewalls for Controlling Narrow-Width Effect by G. Fuse, M. Fukumoto, A. Shinohara, S. Odanaka, M. Sasago, T. Ohzone.
New End Station for Rotation/Wide-Angle Ion Implanter Technique and Its Application to VLSI Devices, Nissin Electric Company, Ltd.

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