Heterojunction compound semiconductor device and method of manuf

Details Heterojunction compound semiconductor device and method of manuf Heterojunction compound semiconductor device and method of manuf

1994-04-01

1998-11-17

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438740, 438718, H01L 21302

Patent

active

058376178

ABSTRACT:
A laminated layer having a layer containing Al (In) and a layer not containing Al (In) alternately laminated one upon another is plasma etched by an etchant gas which can etch both the layers containing and not containing Al (In). An additive gas containing F is added to the etchant gas while a layer not containing Al (In) is etched. When the surface of the layer containing Al (In) is exposed, fluorides are formed on the surface of the layer containing Al (In) and the etching is automatically stopped. An emission peak specific to Al (In) is monitored to detect which layer is presently etched.

REFERENCES:
patent: 4615102 (1986-10-01), Suzuki
patent: 4640737 (1987-02-01), Nagasaka et al.
patent: 5118637 (1992-06-01), Ishikawa
patent: 5160994 (1992-11-01), Shimawaki
patent: 5411632 (1995-05-01), Delage et al.
"Dry-Etch Monitoring of III-V Heterostructures Using Laser Reflectometry and Optical Emission Spectroscopy"; Collot et al.; J. Vac. Sci Tech., B (1991), 9(5), abstract.

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