Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1997-02-19

1998-11-17

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

438240, 438393, 438643, H01L 2120

Patent

active

058375910

ABSTRACT:
A semiconductor device comprises silicon substrate 1 on which an integrated circuit is formed, first insulating layer 6 formed on silicon substrate 1, a capacitor comprising lower electrode 7 formed on first insulating layer 6, dielectric film 8 having a high dielectric constant and upper electrode 9, a second insulating film 11 having contact holes 13 which lead to lower electrode 7 and upper electrode 9 independently, diffusion barrier layer 17 which touches lower electrode 7 and upper electrode 9 at bottom of contact holes 13, and interconnection layer 15 formed on diffusion barrier layer 17. In diffusion barrier layer 17 at the bottom of contact hole 13, a lamellar region made of granular crystal is formed.

REFERENCES:
patent: 5336632 (1994-08-01), Imamura
patent: 5443688 (1995-08-01), Toure et al.
patent: 5591663 (1997-01-01), Nasu et al.
patent: 5624864 (1997-04-01), Arita et al.

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