Integrated circuit having selective bias of transistors for low

Details Integrated circuit having selective bias of transistors for low Integrated circuit having selective bias of transistors for low

1997-06-02

1999-07-27

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

327534, 327535, 327544, 326 36, G05F 110

Patent

active

059296950

ABSTRACT:
An integrated circuit includes a plurality of MOSFETs on a substrate. The plurality of MOSFETs preferably includes at least one MOSFET having a first conductivity type and at least one MOSFET having a second conductivity type. Each MOSFET has an initial threshold voltage. The integrated circuit also preferably includes first and second biasing circuits which selectively bias only a selected well a corresponding conductivity type of the plurality of MOSFETs to produce an absolute value of an effective threshold voltage of only the selected MOSFET which is lower than an absolute value of the initial threshold voltage thereof and thereby inhibit a high standby current for the integrated circuit. Method aspects of the invention are also disclosed.

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