Method of forming epitaxial layers

Details Method of forming epitaxial layers Method of forming epitaxial layers

1989-05-25

1990-12-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG72, 148DIG97, 156613, 437 81, 437939, 437945, H01L 2120

Patent

active

049753886

ABSTRACT:
A method of manufacturing a semiconductor device comprising at least the step of forming by a so-called method of deposition from the chloride vapour phase two superimposed epitaxial layers, the lower layer being made of a ternary compound and the upper layer being made of a binary compound, both of a semiconductor material of the III-V group, characterized in that the operating conditions of deposition temperature and molar fractions of the compounds required to form the layers are chosen so that both the lower layer of ternary material and the upper layer of binary material have before, during and after the transient state corresponding to the passage from the lower layer to the upper layer a maximum rate of coverage with chlorine (Cl) atoms.
Application: hetero-structure GaInAs/InP for optoelectronic integrated circuits.

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