Fabrication of power field effect transistors and the resulting

Details Fabrication of power field effect transistors and the resulting Fabrication of power field effect transistors and the resulting

1976-12-13

1977-11-01

Dost, Gerald A.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, B01J 1700

Patent

active

040558843

ABSTRACT:
The fabrication method provides a power metal-oxide-semiconductor field-effect transistor (MOSFET) having high switching speed capabilities. The high switching speed is facilitated by narrow channel length which is defined by the difference in lateral diffusion junctions of the P substrate and N source diffusions. The high current capability is produced by the large channel width. The high voltage capability is caused by the use of FET substrate P diffusions designed to be located apart from one another by very small distances. Unbiased or floating P diffusions are designed to flank the outer peripheries of P substrate diffusions. The close proximity of the adjacent P substrate diffusions reduces the electric field in the curvature portion of the P diffusion junctions in the N.sup.- silicon body at their inner peripheries, while the presence of the unbiased P diffusions at the appropriate distance from the outer peripheries of P substrate diffusions reduces the electric field in the curvature region of the P substrate diffusions at their outer peripheries. The N silicon body forms the drain region.

REFERENCES:
patent: 3199002 (1965-08-01), Martin

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