Substrate slew circuit providing reduced electron injection

Details Substrate slew circuit providing reduced electron injection Substrate slew circuit providing reduced electron injection

1993-08-11

1994-05-17

Sikes, William L.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307263, 307264, 3072965, 3072968, 328 34, H03K 301

Patent

active

053131118

ABSTRACT:
The described embodiments of the present invention provide a substrate slew circuit that eliminates electron injection. The slew circuit comprises a semiconductor substrate, first and second transistors and a control circuit. One of a source/drain of the source/drain of the first transistor is connected to a reference voltage. One of a source/drain of the second transistor is connected to a gate of the first transistor, the other of the source/drain of the second transistor is coupled to receive a first voltage signal from a substrate pump. The control circuit is connected to the gate of the second transistor for controlling the passage of current from the other of the source/drain of the second transistor to the one of a source/drain of the second transistor.

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IBM Tech. Discl. Bultn., Chang, "FET N-Channel Threshold Voltage-Control Circuit", Jun. 1974, p. 140.

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