Semiconductor pressure transducer structures and methods for mak

Details Semiconductor pressure transducer structures and methods for mak Semiconductor pressure transducer structures and methods for mak

1997-12-22

1999-07-27

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438 53, 438745, 438754, H01L 2100

Patent

active

059289686

ABSTRACT:
Disclosed is a method for making a semiconductor pressure transducer structure in CMOS integrated circuits. The method includes patterning a first metallization layer that lies over an first oxide layer to produce a first patterned metallization layer that is not in electrical contact with a substrate. Forming a tungsten plug in a second oxide layer that overlies the first patterned metallization layer, such that the tungsten plug is in electrical contact with the first patterned metallization layer. Patterning a second metallization layer that overlies the first patterned metallization layer and the tungsten plug to produce a second patterned metallization layer. The patterning of the second metallization layer is configured to prevent the second patterned metallization layer from completely overlying the tungsten plug. The method further includes submerging the pressure transducer structure in a basic solution having a pH level that is greater than about 7. In this manner, the tungsten plug will come in direct contact with the basic solution that causes the tungsten plug to be removed while the pressure transducer structure is submerged in the basic solution.

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S.T. Cho, K. Najafi, C.L. Lowman and K.D. Wise, "An Ultrasensitive Silicon Pressure-Based Flowmeter", 1989 IEEE, Center for Integrated Sensors and Circuits, Dept. of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI.

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