Selective oxide-to-nitride etch process using C.sub.4 F.sub.8 /C

Details Selective oxide-to-nitride etch process using C.sub.4 F.sub.8 /C Selective oxide-to-nitride etch process using C.sub.4 F.sub.8 /C

1996-06-10

1999-07-27

McCamish, Marion

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438743, H01L 213065, H01L 21473

Patent

active

059289678

ABSTRACT:
A dry etch process for use in the fabrication of integrated circuits which use SiN etch stop layers is disclosed. The process is conducted in a reactive-ion etch reactor and employs a gaseous etchant mixture comprised of octaflourocyclobutane (C.sub.4 F.sub.8), carbon monoxide (CO) and Ar. The specific process parameters effect the formation of a polymer on SiN but not on oxide, thereby resulting in a very high etch rate selectivity of the oxide to the nitride.

REFERENCES:
patent: 4324611 (1982-04-01), Vogel et al.
patent: 4352724 (1982-10-01), Sugishima et al.
patent: 4493745 (1985-01-01), Chen et al.
patent: 4502914 (1985-03-01), Trumpp et al.
patent: 4528438 (1985-07-01), Poulsen et al.
patent: 4668338 (1987-05-01), Maydan et al.
patent: 5013692 (1991-05-01), Ide et al.
patent: 5147500 (1992-09-01), Tachi et al.
patent: 5173151 (1992-12-01), Namose
patent: 5176790 (1993-01-01), Arleo et al.
patent: 5259922 (1993-11-01), Yamano et al.
patent: 5266154 (1993-11-01), Tatsumi
patent: 5286344 (1994-02-01), Blalock et al.
patent: 5288367 (1994-02-01), Angell et al.
patent: 5294289 (1994-03-01), Heinz et al.
patent: 5302236 (1994-04-01), Tahara et al.
patent: 5328557 (1994-07-01), Blalock
patent: 5338399 (1994-08-01), Yanagida
patent: 5356515 (1994-10-01), Tahara et al.
patent: 5366590 (1994-11-01), Kadonnara
patent: 5369061 (1994-11-01), Nagayama
patent: 5399237 (1995-03-01), Keswick et al.
patent: 5554557 (1996-09-01), Koh
patent: 5578524 (1996-11-01), Fukase et al.
patent: 5595627 (1997-01-01), Inazawa et al.
patent: 5606188 (1997-02-01), Bronner et al.
patent: 5631179 (1997-05-01), Sung et al.
patent: 5650339 (1997-07-01), Saito et al.
patent: 5700737 (1997-12-01), Yu et al.
patent: 5702981 (1997-12-01), Maniar et al.
patent: 5721090 (1998-02-01), Okamoto et al.
patent: 5801094 (1998-09-01), Yew et al.
patent: 5811357 (1998-09-01), Armacost et al.
patent: 5866485 (1999-02-01), Kirchhoff et al.
Declaration from U.S. Patent application serial No. 07/779,376, filed Oct. 18, 1991, entitled: Method of Etching Object to be Processessed Including Oxide or Nitride Portion. Inventor: Yoshifumi Tahara et al., USP 5,302,236 .

Affiliated with

Also associated with

Rating

Selective oxide-to-nitride etch process using C.sub.4 F.sub.8 /C does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Selective oxide-to-nitride etch process using C.sub.4 F.sub.8 /C, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selective oxide-to-nitride etch process using C.sub.4 F.sub.8 /C will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-878290