Fishing – trapping – and vermin destroying
Patent
1993-05-28
1994-05-17
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 25, 437 26, 437 29, 437 97, 437141, 437248, 437952, 148DIG24, 148DIG3, H01L 21265
Patent
active
053127641
ABSTRACT:
A method of decoupling a step for modulating a defect density from a step for modulating a junction depth. A semiconductor substrate (30) having a portion doped with a dopant (34) is heated to a pre-oxidation anneal temperature in a pre-oxidation anneal step (23). After the pre-oxidation anneal step (23), the semiconductor substrate (30) undergoes an oxidation step (25) which serves as a step for modulating the defect density. Subsequent to the oxidation step (25), the semiconductor substrate (30) undergoes a drive-in step (27) which serves as a step for modulating the junction depth. Then, the temperature of the semiconductor substrate (30) is lowered to allow further processing of the semiconductor substrate (30).
REFERENCES:
patent: 4153486 (1979-05-01), Srinivasan
patent: 4717588 (1988-01-01), Wilson et al.
patent: 4717687 (1988-01-01), Verma
patent: 4784964 (1988-11-01), Hulseweh et al.
patent: 4931405 (1990-06-01), Kamijo et al.
patent: 4975126 (1990-12-01), Margail et al.
patent: 5070029 (1991-12-01), Pfiester et al.
patent: 5139961 (1992-08-01), Solheim et al.
patent: 5151381 (1992-09-01), Liu et al.
patent: 5182226 (1993-01-01), Jang
patent: 5210056 (1993-05-01), Pong et al.
D. Hagmann et al., "A Method to Impede the Formation of Crystal Defects after High Dose Arsenic Implants," J. Electrochem. Soc.: Solid-State Science and Technology, Dec. 1986, pp. 2597-2600.
D. Hagmann, "Understanding and Control of Residual Defects Generated by Implanted High Dose As+ Bipolard Subcollectors," Electrochem. Society Proceedings, vol. 83-9, 1983, pp. 578-588.
Drowley Clifford I.
Egan Erik W.
Teplik James A.
Barbee Joe E.
Chaudhuri Olik
Dover Rennie W.
Motorola Inc.
Paladugu Ramamohan Rao
LandOfFree
Method of doping a semiconductor substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of doping a semiconductor substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of doping a semiconductor substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-876396