Method for fabricating MOMS semiconductor device

Details Method for fabricating MOMS semiconductor device Method for fabricating MOMS semiconductor device

1986-05-15

1987-08-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

156649, 437245, H01L 21461, H01L 21441, H01L 4902

Patent

active

046836420

ABSTRACT:
An MOMS tunnel emission transistor is provided by a plurality of mesa stacked horizontal layers including at least one semiconductor layer (63) having an exposed edge (68) at a generally vertical side (67) of the mesa, such as the 111 plane. A first metal layer (66) has a generally vertical portion (72) extending along the side of the mesa and forming a schottky junction with the edge of the semiconductor layer. A generally vertical oxide layer (70) is on the first metal layer, and a second metal layer (71) is on the oxide. The MOMS tunnel emission transistor is formed by metal (71) - oxide (70) - metal (66) - semiconductor (63).

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IBM Tech. Disc. Bull., "Cryogenic Tunneling Transistor", vol. 29, No. 5 (Oct. 1986), pp. 2244-2245.
IBM Tech. Disc. Bull., "Thin Film Field-Effect Transistor", vol. 29, No. 5 (Oct. 1986), pp. 2224-2226.
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