Method for diffusing dopant atoms

Details Method for diffusing dopant atoms Method for diffusing dopant atoms

1983-03-29

1984-08-28

Ozaki, G.

Metal treatment

Compositions

Heat treating

148186, 148188, 29576T, H01L 2122, H01L 21265

Patent

active

044682603

ABSTRACT:
Dopant atoms are diffused into a silicon wafer by heating the entirety of the silicon wafer with the dopant atoms to a predetermined diffusing temperature in a short period of time, and more specifically, by applying light onto the silicon wafer under such conditions that the temperature difference between a central part of the silicon wafer and its peripheral part is maintained within 65.degree. C. The above diffusion method permits to carry out diffusion of the dopant atoms into silicon wafers with high productivity but without inducing physical defects such as warping or slip lines. It requires a very short time period for effecting diffusion to a desired extent and it enables to make the depth of diffusion greater.

REFERENCES:
patent: 3589949 (1971-06-01), Nelson
patent: 3627590 (1971-12-01), Mammel
patent: 4001047 (1977-01-01), Boah
patent: 4012236 (1977-03-01), Anthony et al.
patent: 4016006 (1977-04-01), Yoshinaka et al.
patent: 4170490 (1979-10-01), Anthony et al.
patent: 4370174 (1983-01-01), Levotter
patent: 4415372 (1983-11-01), Koshino et al.

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