Semiconductor laser having superlattice structure

Details Semiconductor laser having superlattice structure Semiconductor laser having superlattice structure

1985-12-17

1988-12-27

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

357 4, 357 17, H01S 319

Patent

active

047946113

ABSTRACT:
There is disclosed a semiconductor laser having a super lattice structure near an active layer, in which the super lattice structure consists of at least two types of materials which have different bandgaps, the materials are regularly and alternately arranged, and thickness of adjacent layers of the materials change such that a ratio of the thicknesses changes within the super lattice structure toward an active layer.

REFERENCES:
patent: 3978426 (1976-08-01), Logan et al.
patent: 4317086 (1982-02-01), Scifres et al.
patent: 4573161 (1986-02-01), Sakai et al.
JP-A-54 45 090 (24-04-1981) Patent Abstracts of Japan, vol. 5, No. 103 (E-64) [775], Jul. 3, 1981.
Burnham, et al., "Prevention of Optical Facet Damage in Semiconductor Lasers," Xerox Disclosure Journal, vol. 4, No. 5, 9-10/79, p. 637.

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