Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1985-03-05

1988-12-27

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 92, 372 96, H01S 319

Patent

active

047946083

ABSTRACT:
A semiconductor laser device of a new monolithic structure has a long transparent optical waveguide used as a passive cavity directly coupled with an active cavity possessing a gain in the direction of the optical axis of the active cavity on a compound semiconductor substrate. The device is intended to satisfy all four characteristics, which are;

REFERENCES:
patent: 4488307 (1984-12-01), Garmire et al.
patent: 4563765 (1986-01-01), Tsang et al.
patent: 4608697 (1986-08-01), Coldren
patent: 4653058 (1987-03-01), Akiba et al.
patent: 4677630 (1987-06-01), Fujita et al.
Theory of the Linewidth of Semiconductor Lasers, IEEE Journal of Quantum Electronics, vol. QE-18, No. 2, Feb. 1982, pp. 259-264.
Low-Threshold-Current Distributed-Feedback InGaAsP/InP CW Lasers, Electronics Letters, Jan. 21, 1982, vol. 18, No. 2, pp. 77-78.
High-Speed Direct Single-Frequency Modulation with Large Tuning Rate and Frequency Excrusion in Cleaved-Coupled-Cavity Semiconductor Lasers, Appl. Phys. Lett. 42(8), Apr. 15, 1983, Tsang, Olsson, and Logan, pp. 650-652.
GaAs/GaAlAs Active-Passive-Interference Laser, Electronics Letters, Apr. 14, 1983, vol. 19, No. 8, pp. 302-303.
Fujita et al., "Narrow Spectral Linewidth Characteristics of Monolitic Integrated-Passive Cavity InGaAsP/Inp Semiconductor Lasers", Electronic Letters, Apr. 25, 1985, vol. 21, No. 9, pp. 374-376.
Matsuda et al., "Single Longitudinal Mode Operation of Long, Integrated Passive Cavity InGaAsP Lasers", Appl. Physics Lett. 46(11), Jun. 1, 1985, pp. 1028-1030.
Lee, "Linewidth of Single-Frequency Semiconductor Lasers for Coherent Lightwave Communications", IOOC-ECOC '85, Conference in Venice Italy, 1985, pp. 189-196.
Meissner et al., "Investigation of Linewidth and Side-Mode Suppression for a DBR Laser with Integrated Passive Waveguide", Electronics Letters, Mar. 13, 1986, vol. 22, No. 6, pp. 340-341.
Kojima et al., "Long Cavity Ridge Waveguide AlGaAs/GaAs Distributed Feedback Lasers for Spectral Linewidth Reduction", Appl. Phys. Lett., 49(7), Aug. 18, 1986, pp. 366-368.
Lee et al., "Linewidth and FM Characteristics of a Distributed Feedback Laser Monolithically Integrated with a Tunable External Cavity", Electronics Letters, Feb. 12, 1987, vol. 23, No. 4, pp. 153-154.
Piccirilli et al., "1.3 nm Integrated External Cavity Distributed Bragg Reflector Laser", J. Appl. Phys. 62 (1), Jul. 1, 1987, pp. 308-310.

Affiliated with

Also associated with

Rating

Semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-873240