Semiconductor light emitting device and method of etching

Details Semiconductor light emitting device and method of etching Semiconductor light emitting device and method of etching

1997-02-26

1999-09-21

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 96, H01S 319

Patent

active

059563621

ABSTRACT:
A vertical cavity type semiconductor light emitting device includes: a light emitting layer made of a II-IV group compound semiconductor material; a first II-VI group compound semiconductor layer which has an opening at a position corresponding to the inside of the light emitting layer; and an upper mirror and a lower mirror which are provided so as to interpose the light emitting layer therebetween. A current is injected through the opening into the light emitting layer.

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