Surface emitting semiconductor laser

Details Surface emitting semiconductor laser Surface emitting semiconductor laser

1996-12-26

1998-10-06

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 96, H01S 319

Patent

active

058188622

ABSTRACT:
To improve the efficiency and to reduce the temperature rise of a surface emitting semiconductor laser, the laser includes between a buried active layer and a mirror, a current blocking layer incorporating an opening centered on the active layer and having dimensions less than those of the latter. Applications include optical telecommunication systems.

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patent: 5594751 (1997-01-01), Scott
Seiiji Uchiyama et al, "GAINASP/INP Square Buried-Heterostructure Surface-Emitting Lasers Regrown by MOCVD", IEICE Transactions on Electronics, vol. E78-C, No. 9, 1 Sep. 1995, pp. 1312-1314.
G. S. Li et al, "Polarisation and Modal Behaviour of Low Threshold Oxide and Airgap Confined Vertical Cavity Lasers", Electronics Letters, vol. 31, No. 23, 9 Nov. 1995, pp. 2014-2015.
S. Rochus et al, "Vertical Cavity Surface-Emitting Lasers with Buried Lateral Current Confinement", Compound Semiconductors 1994, San Diego, Sep. 18-22, 1994, No. Proc. 21, 18 Sep. 1994, pp. 563-566.
G. M. Yang et al, "Ultralow Threshold Current Vertical-Cavity Surface-Emitting Lasers Obtained with Selective Oxidation", Electronics Letters, vol. 31, No. 11, 25 May 1995, pp. 886-888.
Toshihiko Baba et al, "Continuous Wave GAINASP/INP Surface Emitting Lasers With a Thermally Conductive MGO/SI Mirror", Japanese Journal of Applied Physics, vol. 33, No. 4A, Part 01, 1 Apr. 1994, pp. 1905-1909.

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