Patent
1982-02-05
1986-07-22
Edlow, Martin H.
357 13, 357 2313, 357 41, 357 43, H01L 2972, H01L 2990, H01L 2704
Patent
active
046022678
ABSTRACT:
A protection element responsible for protecting a semiconductor element included in a semiconductor device from a voltage higher than the voltage which the semiconductor element is allowed to receive, the protection element virtually being a lateral bipolar transistor, in which an improvement is made to increase the voltage at which the protection element operates. The improvement being realized by separating the emitter from a region containing an impurity at a high concentration and which is a portion of the base of the lateral bipolar transistor.
REFERENCES:
patent: 3403270 (1968-09-01), Pace et al.
patent: 3470390 (1969-09-01), Lin
patent: 3577043 (1971-05-01), Cook
patent: 3739238 (1973-06-01), Hara
patent: 4131908 (1978-12-01), Daub et al.
patent: 4139935 (1979-02-01), Bertin et al.
patent: 4256515 (1981-03-01), Miles et al.
Edlow Martin H.
Fallick E.
Fujitsu Limited
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