Semiconductor device with improved connection hole for embedding

Details Semiconductor device with improved connection hole for embedding Semiconductor device with improved connection hole for embedding

1996-03-18

1999-12-14

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257759, 257763, 257764, 257774, H01L 2354, H01L 2348

Patent

active

060021756

ABSTRACT:
A semiconductor device comprising a first electrically conductive layer formed on a semiconductor element or on one main surface of a semiconductor substrate, an insulating layer formed on said first electrically conductive layer through which a connection hole of which diameter is the smallest in a portion other than the bottom is formed, and a second electrically conductive layer formed on said insulating layer.

REFERENCES:
patent: 4809055 (1989-02-01), Ishibashi et al.
patent: 5091768 (1992-02-01), Yamazaki
patent: 5200808 (1993-04-01), Koyama et al.
patent: 5308793 (1994-05-01), Taguchi et al.
patent: 5464794 (1995-11-01), Lur et al.
patent: 5572072 (1996-11-01), Lee
G.A. Dixit, et al. "A Novel High Pressure Low Temperature Aluminum Plug Technology For Sub-0.5 .mu.m Contact/Via Geometries", IEEE, 1994, pp. 105-108.

Affiliated with

Also associated with

Rating

Semiconductor device with improved connection hole for embedding does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with improved connection hole for embedding, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with improved connection hole for embedding will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-866198