Photoconductive member comprising layer of A-Si/A-Si(Ge)/A-Si(O)

Details Photoconductive member comprising layer of A-Si/A-Si(Ge)/A-Si(O) Photoconductive member comprising layer of A-Si/A-Si(Ge)/A-Si(O)

1984-12-27

1986-07-22

Goodrow, John L.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 58, 430 95, G03G 5085

Patent

active

046019642

ABSTRACT:
A light-receiving member comprises a substrate for light-receiving member and a light-receiving layer having photoconductivity provided on said substrate, said light-receiving layer comprising from the side of said substrate a first layer (I) comprising an amorphous material containing silicon atoms, a second layer (II) comprising an amorphous material containing silicon atoms and germanium atoms and a third layer (III) comprising an amorphous material containing silicon atoms and oxygen atoms, and the germanium atoms contained in said second layer (II) being distributed ununiformly in the layer thickness direction of said layer.

REFERENCES:
patent: 4451546 (1984-05-01), Kawamura et al.
patent: 4490450 (1984-12-01), Shimizu et al.
patent: 4491626 (1985-01-01), Kawamura et al.
patent: 4495262 (1985-01-01), Matsuzaki et al.

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