Vertically integrated IGFET device

Details Vertically integrated IGFET device Vertically integrated IGFET device

1983-06-02

1985-11-19

James, Andrew J.

357 237, 357 55, 357 4, H01L 2978, H01L 2701, H01L 2906, H01L 2712

Patent

active

045545707

ABSTRACT:
An integrated device which incorporates a plurality of interconnected vertical IGFETs on a single substrate is described. A monocrystalline silicon region extends from an area of the substrate surface and a plurality of insulated gate electrodes are disposed so as to be contiguous with the monocrystalline silicon region. Each of the insulated gate electrodes can be selectively biased with a predetermined voltage so as to create an inversion channel in a segment of the monocrystalline silicon region contiguous therewith.

REFERENCES:
patent: 3412297 (1968-11-01), Amlinger
patent: 3564358 (1971-02-01), Hahnlein
patent: 3600651 (1971-08-01), Duncan
patent: 4101350 (1978-07-01), Possley et al.
patent: 4375717 (1983-03-01), Tonnel
patent: 4472729 (1984-09-01), Shibata et al.
patent: 4479297 (1984-06-01), Mizutani

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