Method for making field effect devices and capacitors with impro

Details Method for making field effect devices and capacitors with impro Method for making field effect devices and capacitors with impro

1998-04-15

1999-12-14

Kunemund, Robert

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438778, H01L 2100, H01L 213065

Patent

active

060017414

ABSTRACT:
An electronic device is formed by depositing a thin film of high dielectric constant material on a silicon substrate, exposing the structure to plasma, and then forming the top electrode. The plasma substantially reduces the density of charge traps at the dielectric/silicon interface. Advantageously, the dielectric film is passivated with a nitrogen-containing material before forming the top electrode to prevent interdiffusion between the electrode and the dielectric.

REFERENCES:
patent: 4762728 (1988-08-01), Keyser et al.
patent: 5337207 (1994-08-01), Jones et al.
patent: 5442585 (1995-08-01), Eguchi et al.

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