Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1997-11-26

1999-12-14

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

216 49, 438725, 438705, H01L 2100

Patent

active

060017392

ABSTRACT:
A method of manufacturing a semiconductor device comprising the steps of forming an organic insulating film of a low dielectric constant on a surface of a silicon wafer, forming a photoresist film on the organic insulating film, exposing the photoresist film to light to form a pattern, reacting a silicon containing compound with the photoresist film pattern-exposed to silylate a light exposed portion of the photoresist film, thereby making etching resistance of the light-exposed portion higher than a non-light-exposed portion of the photoresist film, and performing reactive ion etching using a silylated photoresist film as a mask, thereby dry-developing the non light-exposed portion of the photoresist film simultaneously with etching the organic insulating film.

REFERENCES:
patent: 4751170 (1988-06-01), Mimura et al.
patent: 4808511 (1989-02-01), Holmes
patent: 5322764 (1994-06-01), Kamiyama et al.
David Cheung, "Dielectric CVD Films for Advanced Lithography Applications", Applied Materials, Inc.; SEMICON Japan, Dec. 1996., pp. 1-18.

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