Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1984-02-27
1985-05-28
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29576T, 148 15, 148187, 357 65, 357 91, H01L 21324, H01L 21263
Patent
active
045191271
ABSTRACT:
A method of manufacturing a metal semiconductor field-effect transistor (MESFET) by controlling implanted peak surface dopants, is provided which comprises the steps of selectively ion-implanting an impurity in the surface of a semi-insulating substrate made of a compound selected from the group consisting of GaAs and InP performing a first ion implantation of the impurity into a portion of the surface of the semi-insulating substrate, removing that portion of the second impurity ion injection layers which extends from its surface to a depth corresponding to the vicinity of the peak value of the impurity concentration distribution, performing a second ion implantation of the impurity at least once from the surface of the remaining second impurity ion injection layers, and annealing to activate the first and second impurity ion injection layers to form the active layer on the surface and drain regions at the surface of the semi-insulating substrate and the ends of the active layer.
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Roy Upendra
Tokyo Shibaura Denki Kabushiki Kaisha
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