Method for producing a semiconductor laser

Details Method for producing a semiconductor laser Method for producing a semiconductor laser

1996-06-20

1999-01-05

Tsai, Jey

Semiconductor device manufacturing: process

Repair or restoration

438 47, 148DIG95, H01L 2120

Patent

active

058562079

ABSTRACT:
The semiconductor laser of the invention includes: a semiconductor substrate of a first conductivity type; a stripe-shaped multilayer structure, formed on the semiconductor substrate, the stripe-shaped multilayer structure including an active layer; and a current blocking portion formed on the semiconductor substrate on both sides of the stripe-shaped multilayer structure, wherein the current blocking portion has a first current blocking layer of a second conductivity type, and a second current blocking layer of the first conductivity type formed on the first current blocking layer, the first current blocking layer includes a low-concentration region having a relatively low concentration of an impurity of the second conductivity type, and a high-concentration region having an impurity concentration which is higher than that of the low-concentration region, and the low-concentration region is provided at a position closer to the stripe-shaped multilayer structure than the high-concentration region.

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A.W. Nelson et al., "The Role of MOVPE in the Manufacture of High Performance InP Based Optoelectronic Devices", Journal of Crystal Growth 93, pp. 792-802 (1988) No Month.
K. Uomi et al., "Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers", Japanese Journal of Applied Physics, vol. 29, No. 1, pp. 88-94 (Jan. 1990) .

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