Semiconductor component

Details Semiconductor component Semiconductor component

1986-11-05

1989-11-07

Hille, Rolf

357 59, 357 71, H01L 21516, H01L 2131

Patent

active

048795860

ABSTRACT:
In a semiconductor component, in particular, a high-voltage transistor, with an oxygen doped or nitrogen doped silicon layer on the surface, a glass layer is provided between the doped silicon layer and the semi-conductor surface.

REFERENCES:
patent: 4063275 (1977-12-01), Matsushita et al.
patent: 4084986 (1978-04-01), Aoki et al.
patent: 4161744 (1979-07-01), Blaske et al.
patent: 4420765 (1983-12-01), Tarng
Matsushita et al "Highly Reliable High-Voltage Transistor by Use of SIPOS Process", IEEE Transactions on Elect. Devices vol. ED-23, No. 8, Aug. 1976, pp. 826-830.

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