Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1983-08-23
1987-01-27
Clawson, Jr., Joseph E.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 237, 357 65, 357 86, 307279, H01L 2702
Patent
active
046397582
ABSTRACT:
A source region and a drain region are formed in a semiconductor layer, a thin insulating layer of SiO.sub.2 is formed on the semiconductor layer, and a gate electrode is formed thereover. Al metal forms ohmic contacts with the source and drain regions to provide a source electrode and a drain electrode, respectively. Al diffused in the drain region remains within the drain region, and the drain region and the substrate region form a p-n junction. Al diffused in the source region traverses the source region and reaches the substrate region to form an ohmic contact between the source region and the substrate region.
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Clawson Jr. Joseph E.
Tokyo Shibaura Denki Kabushiki Kaisha
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