1985-04-19
1987-01-27
Edlow, Martin H.
H01L 2980
Patent
active
046397531
ABSTRACT:
In a semiconductor device, the distance between a first gate region close to a source region and a second gate region, which are provided so as to sandwich therebetween a channel functioning as a path of carriers, is selected to be greater than a channel width determined by the second gate region, or a distance between a place where channel width determined by the second gate region is the narrowest (when WG2 is constant over the channel, a portion of the second gate closest to the source region), and a drain region is selected to be greater than the channel width, thereby electrostatic shielding is achieved. Furthermore, a potential barrier (intrinsic gate region) is formed within the channel at a place close to the first gate region to provide a new Shielding Ideal-Saturated Operation Static Induction Transistor (SISO-SIT) actualizing ideal saturated characteristic keeping high transconductance of an SIT having unsaturated characteristic. In addition as carrier motion within SISO-SIT undergoes nonscattering travelling, while the intrinsic gate region is arranged to include a tunnel barrier, a new tunnel transistor named Shielding Ideal-Saturated Operation and Ballistic Tunnel Transitor (SISO-BATT) exhibiting ideal saturated characteristic is provided. Charge transfer device having potential-setting function of high performance and solid state imaging device using a plurality of SISO-SITs according to the present invention as light-receiving elements are also disclosed.
REFERENCES:
patent: 29971 (1879-04-01), Nishizawa et al.
patent: 2900531 (1957-02-01), Wallmark
patent: 4216029 (1980-08-01), Ohki
IEEE Transactions on Electron Devices, vol. ED-22. Apr. 1975, "Field-Effect Transistor Versus Analog Transistor" by Nishizawa et al.
IEEE Transactions on Electron Devices, vol. ED-25, No. 7, Jul. 1978, "Characteristics of Static Induction Transistors" by Mochida et al.
IEEE Transactions on Electron Devices, vol. ED-27, No. 3, Mar. 1980, "Punching Through Device and Its Integration" by Ohmi.
Crane Sara W.
Edlow Martin H.
Matsushita Electric - Industrial Co., Ltd.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-860938