Semiconductor device

Details Semiconductor device Semiconductor device

1988-06-15

1989-11-07

Larkins, William D.

357 237, 357 40, 357 42, H01L 2708

Patent

active

048795852

ABSTRACT:
A semiconductor device, which is subjected to a thermal treatment process during manufacture of the device, includes a wafer having semiconductor regions insulated from a semiconductor substrate by insulation layers, with at least one semiconductor element formed in each of the semiconductor regions, and at least one semiconductor element formed in the semiconductor substrate. The main surface of the semiconductor regions are substantially in the same plane as the main surface of the semiconductor substrate. The total area of the main surfaces of the semiconductor regions is 30% or less of the area of the wafer to prevent warping of the wafer resulting from the thermal treatment process.

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